10/3/2013 schematic first sensor apd hybrid series data sheet part description ad500-8-1.3g-mini us order # 05-085 internationa l order # 501536 active area: 0.196 mm (500 m diameter) 2 backside view chip dimensions pin 1 5 pl case/gnd pin 5 ?4.70 12.7 ?0.46 5 pl pin circle 1 out- v +v bias cc v out+ v pin 4 pin 3 pin 2 45 ?2.0 min ad 500 ?5.40 2.1 2.95 ?2.54 1.00 sq features description applications ? ? 0.500 mm active area ? low noise ? high speed ? miniaturized the ad500-8-1.3g-mini is an avalanche photodiode amplifier hybrid containing a 0.196 mm 2 active area apd chip integrated with an internal transimpedance amplifier. hermetically packaged in a to-52 with a borosilicate glass window cap. ? lidar ? analytical instruments ? medical equipment absolute maximum rating spectral response at m = 100 symbol parameter min max units t stg storage temp -55 +125 ? c t op operating temp 0 +60 ? c t soldering soldering temp - +240 ? c p power dissipation - 360 mw v cc single supply voltage +3.0 +5.5 v i cc supply current - 63 ma electro-optical characteristics @ 23 ? c (v cc = single supply +3.3v, r l = 100 w unless otherwise specified) symbol characteristic test conditions min typ max units ? -3db frequency response -3db @ 905 nm --- 1.3 --- ghz s sensitivity* ? = 905 nm; m = 100 --- 85 --- mv/w i cc supply current dark state --- 34 63 ma * sensitivity = apd responsivity (0.3 a/w x 100 gain) x tia gain (2.8k) these devices are sensitive to electrostatic di scharge. please use esd precautions when handling. disclaimer: due to our policy of continued developmen t, specifications are subject to change without notice. 400 500 600 700 800 900 1000 1100 wavelength (nm) responsivity (a/w) 0 10 20 30 40 50 60 pin 2 c1 c2 +v pin 3 bias pin 1 out+ out- pin 4 case/gnd pin 5 cc (+3.3v) v ad500-8 h o r s c o m p l i a n t
10/3/2013 avalanche photodiode data @ 23 ? c symbol characteristic test conditions min typ max units i d dark current m = 100 (see note 2) --- 0.5 2.0 na c capacitance m = 100 (see note 2) --- 2.2 --- pf v br breakdown voltage (see note 1) i d = 2 a 80 --- 160 v temperature coefficient of v br --- 0.45 --- v/k responsivity m = 100; ? = 800 nm 45 50 --- a/w ?? 3db bandwidth -3db --- 1.3 --- ghz t r rise time m = 100; ? = 905 nm; r l = 50 ? --- 0.35 --- ns optimum gain 50 60 --- ?excess noise? factor m = 100 --- 2.2 --- ?excess noise? index m = 100 --- 0.2 --- noise current m = 100 --- 1.0 --- pa/hz 1/2 max gain 200 --- --- nep noise equivalent power m = 100; ? = 905 nm --- 2.0 x 10 -14 --- w/hz 1/2 note 1: the following different breakdown voltage ranges are available: (80 ? 120 v), (120 ? 160 v). note 2: measurement conditions: setup of photo current 1 na at m = 1 and irradiated by a 880 nm, 80 nm bandwidth led. increase the photo current up to 100 na, (m = 100) by internal multiplication due to an increasing bias voltage. transimpedance amplifier data @ 25 ? c (v cc = +3.0 v to 5.5 v, t a = 0c to 70c, 100 ? load between out+ and out-. typical values are at t a = 25c, vcc = +3.3 v) parameter test conditions min typ max units supply voltage 3 5 5.5 v supply current --- 34 63 ma transimpedance differential, measured with 40 a p-p signal 2.10 2.75 3.40 k ? ? maximum differential output voltage input = 2 ma p-p with 100 ? differential termination 220 380 575 mv p-p ac input overload 2 --- --- ma p-p dc input overload 1 --- --- ma input referred rms noise to-52 package, see note 4 --- 490 668 na input referred noise density see note 4 --- 11 --- pa/hz 1/2 small signal bandwidth source capacitance = 0.85 pf, see note 3 1.525 2.00 --- ghz low frequency cutoff -3 db, input < 20 a dc --- 30 --- khz transimpedance linear range peak to peak 0.95 < linearity < 1.05 40 --- --- a p-p power supply rejection ratio (psrr) output referred, f < 2 mhz, pssr = -20 log ( ? vout / ? vcc) --- 50 --- db note 3: source capacitance for ad500-8- 1.3g-mini is the capacitance of apd. note 4: input referred noise is calculated as rms output noise / (gain at f = 10 mhz). noise density is (input referred noise)/ bandwidth. transfer characteristics the circuit used is an aval anche photodiode directly coupled to a high speed data handling transimpedance amplifier. the output of the apd (light generated current) is applied to the input of the amplifier. the amplifier output is in the form of a differential volta ge pulsed signal. the apd responsivity curve is provided in fig. 2. the term amps/watt involves t he area of the apd and can be expressed as amps/mm 2 /watts/mm 2 , where the numerator applies to the current generated divided by the area of the detector, the denominator refers to the power of the radiant energy present per unit area. as an example assume a radiant input of 1 microwatt at 850 nm. the apd?s cor responding responsivity is 0.4 a/w. if energy in = 1 w, then the current from the apd = (0.4 a/w) x (1 x 10 -6 w) = 0.4 a. we can then factor in the typical gain of the apd of 100, making the input current to the amplifier 40 a. from fig. 5 we can see the amplifier output will be approxima tely 75 mv p-p. application notes the ad500-8-1.3g-mini is a high speed optical data receiver. it in corporates an internal transimpedance amplifier with an avala nche photodiode. this device does not operate in dc mode or below 30 khz. this detector requires +3.0 v to +5.5 v voltage supply for th e amplifier and a high voltage supply (100-240 v) for the apd. the internal apd follows the gain curve published for the ad500-8-to52-s1 avalanc he photodiode. the transimpedance amplifier provides differenti al output signals in the range of 200 millivolts differential. the apd gai n is voltage and temperature dependent. some form of temperatur e compensation bias voltage control may be required. in order to achieve highest gain, the av alanche photodiode needs a positive bias voltage (fig. 1). however, a current limiting resistor must be placed in series with the photodiode bias voltage to limit the current into the transimpedance amplifier. failure to limit this current may result in permanent failure of the device. the suggested initial value for th is limiting resistor is 390 kohm. when using this receiver, good high frequency placement and routing techni ques should be followed in order to achieve maximum f requency response. this includes the use of bypass capacitors, short leads and careful attent ion to impedance matching. the large gain b andwidth values of this device also demand that good shielding practices be used to avoid parasitic oscillations and reduce output noise .
10/3/2013 fig. 1: apd gain vs bias voltage fig. 2: apd spectral response (m = 1) 130 135 140 145 150 155 160 165 170 1 10 100 1000 applied voltage (v) gain 400 500 600 700 800 900 1000 1100 wavelength (nm) responsivity (a/w) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 fig. 3 : differential output vs temperature fig.4 : apd capacitance vs voltage ambient temperature differential output amplitude (mv p-p) 300 (c) -40 -20 0 20 40 60 80 100 320 340 360 380 400 420 440 460 10 0 applied bias voltage (v) 20 30 40 50 60 junction capacitance (pf) 0 5 10 15 20 25 30 35 fig. 5: amplifier transf er function fig. 6: total frequency response -100 -200 -100 -50 50 100 150 200 -75 0 -50 -25 25 50 75 100 input current (a) differential output voltage (mv p-p) 0 -150 transimpedance (db) 50 frequency (hz) 1g 10g 100m 10m 1m 55 60 65 70 75 usa: first sensor, inc. 5700 corsa avenue, #105 westlake village, ca 91362 usa t + 818 706-3400 f + 818 889-7053 contact.us@first-sensor.com www.first-sensor.com international sales: first sensor ag peter-behrens-str. 15 12459 berlin, germany t + 49 30 6399 2399 f + 49 30 639923-752 sales.opto@first-sensor.com www.first-sensor.com
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